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Agilent ABA-32563 2.5 GHz Broadband Silicon RFIC Amplifier
Data Sheet
Features * Operating Frequency DC ~ 2.5 GHz * 19 dB Gain * VSWR < 2.0 throughout operating frequency * 8.4 dBm Output P1dB Description Agilent's ABA-32563 is an economical, easy-to-use, internally 50 matched, silicon monolithic broadband amplifier that offers excellent gain and broadband response from DC to 2.5 GHz. Packaged in an ultraminiature SOT-363 package, it requires half the board space of a SOT-143 package. At 2 GHz, the ABA-32563 offers a small-signal gain of 19 dB, output P1dB of 8.4 dBm and 19.5 dBm output third order intercept point. It is suitable for use as wideband applications. They are designed for low cost gain blocks in cellular applications, DBS tuners, LNB and other wireless communication systems. ABA-32563 is fabricated using Agilent's HP25 silicon bipolar process, which employs a doublediffused single polysilicon process with self-aligned submicron emitter geometry. The process is capable of simultaneous high fT and high NPN breakdown (25 GHz fT at 6V BVCEO). The process utilizes industry standard device oxide isolation technologies and submicron aluminum multilayer interconnect to achieve superior performance, high uniformity, and proven reliability. Surface Mount Package SOT-363/SC70 * 19.5 dBm Output IP3 * 3.5 dB Noise Figure * Unconditionally Stable * Single 3V Supply (Id = 37 mA) * Lead-free Applications * Amplifier for Cellular, Cordless, Special Mobile Radio, PCS, ISM, Wireless LAN, DBS, TVRO, and TV Tuner Applications
Pin Connections and Package Marking
GND 1 Output & Vcc
2Kx
GND 2 Input
GND 3 Vcc
Attention: Observe precautions for handling electrostatic sensitive devices.
ESD Machine Model (Class A) ESD Human Body Model (Class 1B) Refer to Agilent Application Note A004R: Electrostatic Discharge Damage and Control.
Note: Top View. Package marking provides orientation and identification. "x" is the date code.
Simplified Schematic
Vcc RF Output & Vcc
RF Input
Ground 2
Ground 3
Ground 1
ABA-32563 Absolute Maximum Ratings [1] Symbol
Vcc Pin Pdiss Tj TSTG
Parameter
Device Voltage, RF output to ground (T = 25C) CW RF Input Power (Vcc = 3V) Total Power Dissipation [3] Junction Temperature Storage Temperature
Units
V dBm W C C
Absolute Max.
6 15 0.6 150 -65 to 150
Thermal Resistance[2] (Vcc = 3V) j-c = 124.3C/W
Notes: 1. Operation of this device in excess of any of these limits may cause permanent damage. 2. Thermal resistance measured using 150C Liquid Crystal Measurement Technique. 3. Board (package belly) temperature, Tc, is 25C. Derate 8.1 mW/C for Tc > 120.8C.
Electrical Specifications
Tc = +25C, Zo = 50 , Pin = -30 dBm, Vcc = 3V, Freq = 2 GHz, unless stated otherwise.
Symbol
Gp[1] Gp NF[1] P1dB[1] OIP3[1] VSWRin[1] VSWRout Icc[1] Td[1]
[1]
Parameter and Test Condition
Power Gain (|S21|2 ) Power Gain Flatness, Noise Figure Output Power at 1dB Gain Compression Output Third Order Intercept Point Input VSWR Output VSWR Device Current Group Delay f = 0.1 ~ 1.5 GHz f = 0.1 ~ 2.5 GHz
Units
dB dB dB dBm dBm
Min.
17.5
Typ.
19.0 1.0 3.0 3.5 8.4 19.5 <1.5 <1.5
Max.
Std Dev.
4.4
mA ps
37 140
42.5
Notes: 1. Measurements taken on 50 test board shown on Figure 1. Excess circuit losses had been de-embedded from actual measurements. Standard deviation and typical data based on at least 500 parts sample size from 2 wafer lots. Future wafers allocated to this product may have nominal values anywhere within the upper and lower spec limits.
Cblock
1 nF
RF Outp
2Kx
RFC 33 nH
F Input Cblock
1 nF
Vcc Cbypass
100 pF
Cbypass 1000 pF
Figure 1. ABA-32563 Production Test Circuit.
2
ABA-32563 Typical Performance
Tc = +25C, Zo = 50, Vcc = 3V unless stated otherwise.
22 22 5 4.5 4
3.5V 3V 2.7V
20
20
GAIN (dB)
NF (dB)
+85C +25C -40C
18
GAIN (dB)
18
3.5 3
16
3.5V 3V 2.7V
16
14
14
2.5 2
12
0
0.5
1
1.5
2
2.5
3
3.5
4
12
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 2. Gain vs. Frequency and Voltage.
Figure 3. Gain vs. Frequency and Temperature.
Figure 4. Noise Figure vs. Frequency and Voltage.
13
5 4.5 4
13
11
11
P1dB (dBm)
P1dB (dBm)
NF (dB)
9
9
3.5 3 2.5 2 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz)
+85C +25C -40C
7
3.5V 3V 2.7V
7
+85C +25C -40C
5
5
3
3 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz)
0
0.5
1
1.5
2
2.5
3
3.5
4
FREQUENCY (GHz)
Figure 5. Noise Figure vs. Frequency and Temperature.
Figure 6. Output Power for 1 dB Gain Compression vs. Frequency and Voltage.
Figure 7. Output Power for 1 dB Gain Compression vs. Frequency and Temperature.
3
ABA-32563 Typical Performance, continued
Tc = +25C, Zo = 50, Vcc = 3V unless stated otherwise.
32
3.5V 3V 2.7V
32
+85C +25C -40C
28
28
OIP3 (dBm)
24
OIP3 (dBm)
0 3.5
24
20
20
16
16
12 0.5 1 1.5 2 2.5 3 4 FREQUENCY (GHz)
12 0 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz)
Figure 8. Output IP3 vs. Frequency and Voltage.
1.8
VSWR IN VWSR OUT
Figure 9. Output IP3 vs. Frequency and Temperature.
120 100 80
+85C +25C -40C
1.6
Icc (mA)
0 0.5 1 1.5 2 2.5 3 3.5 4
VSWR
1.4
60 40
1.2 20 1.0 0 0 1 2 3 4 5 6 7 VOLTAGE (V)
FREQUENCY (GHz)
Figure 10. Input and Output VSWR vs. Frequency.
Figure 11. Supply Current vs. Voltage and Temperature.
4
ABA-32563 Typical Scattering Parameters
TC = +25C, ZO = 50, VCC = 3V, unless stated otherwise
Freq (GHz)
0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.20 2.40 2.60 2.80 3.00 3.20 3.40 3.60 3.80 4.00 4.20 4.40 4.60 4.80 5.00 5.20 5.40 5.60 5.80 6.00
S11 Mag.
0.12 0.11 0.11 0.10 0.10 0.10 0.10 0.09 0.09 0.09 0.08 0.08 0.08 0.08 0.08 0.07 0.08 0.08 0.08 0.08 0.08 0.09 0.10 0.12 0.13 0.15 0.16 0.19 0.20 0.22 0.23 0.26 0.27 0.28 0.29 0.30 0.31 0.32 0.34 0.35
S11 Ang.
171.5 167.2 162.7 158.0 139.9 129.4 121.2 111.6 102.0 93.3 84.1 75.4 66.5 55.2 45.2 34.1 24.4 10.6 -2.2 -12.5 -34.6 -57.6 -77.3 -93.3 -108.3 -124.9 -137.7 -150.1 -162.9 -175.0 175.0 166.1 155.3 145.8 138.3 131.7 126.2 120.9 115.6 110.4
S21 dB
20.0 20.0 20.1 20.1 20.0 20.0 19.9 19.8 19.7 19.6 19.5 19.4 19.3 19.2 19.1 19.0 18.8 18.6 18.5 18.4 17.9 17.5 17.0 16.4 15.9 15.3 14.6 14.0 13.5 12.8 12.1 11.6 11.0 10.2 9.5 8.8 8.2 7.7 7.2 6.6
S21 Mag.
10.00 10.04 10.07 10.09 10.02 9.95 9.88 9.79 9.69 9.58 9.48 9.35 9.24 9.12 8.99 8.86 8.71 8.54 8.41 8.27 7.87 7.51 7.08 6.64 6.21 5.81 5.39 5.04 4.71 4.38 4.04 3.79 3.54 3.25 2.99 2.77 2.57 2.42 2.28 2.14
S21 Ang.
-5.6 -11.0 -16.7 -22.5 -28.8 -34.7 -40.6 -46.4 -52.2 -58.1 -63.7 -69.5 -75.2 -80.8 -86.5 -92.3 -98.1 -103.6 -109.3 -115.0 -126.4 -137.5 -148.8 -159.3 -169.6 -179.7 170.6 161.4 152.1 142.9 134.4 126.2 117.3 108.7 101.3 94.2 87.6 81.0 74.3 67.7
S12 Mag.
0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.02 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.03 0.04 0.04 0.04 0.04 0.04 0.05 0.05 0.05 0.05 0.06 0.06 0.06 0.07 0.07 0.08 0.08 0.09 0.09 0.09
S12 Ang.
2.6 6.0 9.5 12.8 15.7 18.6 21.2 23.5 25.5 26.9 28.6 29.6 30.2 30.9 31.4 31.8 31.9 31.7 31.9 31.9 31.8 31.9 32.3 32.4 32.4 32.1 32.2 31.5 31.0 30.5 30.0 28.2 26.7 25.2 23.2 20.8 18.4 15.6 12.7 9.6
S22 Mag.
0.28 0.27 0.27 0.27 0.26 0.26 0.25 0.25 0.25 0.24 0.24 0.23 0.22 0.22 0.21 0.20 0.18 0.17 0.16 0.15 0.12 0.10 0.08 0.07 0.07 0.08 0.09 0.10 0.12 0.13 0.14 0.15 0.15 0.16 0.16 0.16 0.16 0.16 0.16 0.15
S22 Ang.
-6.5 -12.9 -18.8 -24.8 -27.6 -31.7 -35.9 -40.4 -45.0 -49.8 -54.5 -59.4 -64.5 -69.8 -75.2 -80.7 -86.4 -92.0 -98.5 -105.6 -120.6 -139.2 -163.9 167.4 137.7 115.7 98.7 86.3 78.9 71.9 65.2 59.1 55.0 50.2 45.0 40.1 35.1 30.3 25.3 23.8
K Factor
2.70 2.70 2.70 2.70 2.60 2.60 2.50 2.40 2.40 2.30 2.30 2.20 2.10 2.10 2.10 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.00 2.10 2.10 2.10 2.10 2.10 2.10 2.10 2.10 2.10 2.10 2.10 2.20 2.20 2.20 2.20 2.20 2.20
5
Device Models Refer to Agilent's web site www.agilent.com/view/rf Ordering Information Part Number
ABA-32563-TR1G ABA-32563-TR2G ABA-32563-BLKG
Devices per Container
3000 10000 100
Container
7" reel 13" reel antistatic bag
Note: Only lead-free option available.
Package Dimensions Outline 63 (SOT-363/SC-70)
Recommended PCB Pad Layout for Agilent's SC70 6L/SOT-363 Products
0.026
HE
E
0.079
e
0.039
D
0.018
Q1 A2 A1 L A c
Dimensions in inches.
b
DIMENSIONS (mm) SYMBOL E D HE A A2 A1 Q1 e b c L MIN. 1.15 1.80 1.80 0.80 0.80 0.00 0.10 0.650 BCS 0.15 0.10 0.10 0.30 0.20 0.30 MAX. 1.35 2.25 2.40 1.10 1.00 0.10 0.40
NOTES: 1. All dimensions are in mm. 2. Dimensions are inclusive of plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. All specifications comply to EIAJ SC70. 5. Die is facing up for mold and facing down for trim/form, ie: reverse trim/form. 6. Package surface to be mirror finish.
6
Device Orientation
REEL TOP VIEW 4 mm END VIEW
CARRIER TAPE USER FEED DIRECTION COVER TAPE
8 mm
2Kx
2Kx
2Kx
2Kx
(Package marking example orientation shown.)
Tape Dimensions and Product Orientation for Outline 63
P P0 D P2
E
F W C
D1 t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX.
K0
10 MAX.
A0
B0
DESCRIPTION CAVITY LENGTH WIDTH DEPTH PITCH BOTTOM HOLE DIAMETER DIAMETER PITCH POSITION WIDTH THICKNESS WIDTH TAPE THICKNESS CAVITY TO PERFORATION (WIDTH DIRECTION) CAVITY TO PERFORATION (LENGTH DIRECTION)
SYMBOL A0 B0 K0 P D1 D P0 E W t1 C Tt F P2
SIZE (mm) 2.40 0.10 2.40 0.10 1.20 0.10 4.00 0.10 1.00 + 0.25 1.50 0.10 4.00 0.10 1.75 0.10 8.00 + 0.30 - 0.10 0.254 0.02 5.40 0.10 0.062 0.001 3.50 0.05 2.00 0.05
SIZE (INCHES) 0.094 0.004 0.094 0.004 0.047 0.004 0.157 0.004 0.039 + 0.010 0.061 + 0.002 0.157 0.004 0.069 0.004 0.315 + 0.012 0.0100 0.0008 0.205 + 0.004 0.0025 0.0004 0.138 0.002 0.079 0.002
PERFORATION
CARRIER TAPE COVER TAPE DISTANCE
7
www.agilent.com/semiconductors
For product information and a complete list of distributors, please go to our web site. For technical assistance call: Americas/Canada: +1 (800) 235-0312 or (916) 788-6763 Europe: +49 (0) 6441 92460 China: 10800 650 0017 Hong Kong: (65) 6756 2394 India, Australia, New Zealand: (65) 6755 1939 Japan: (+81 3) 3335-8152(Domestic/International), or 0120-61-1280(Domestic Only) Korea: (65) 6755 1989 Singapore, Malaysia, Vietnam, Thailand, Philippines, Indonesia: (65) 6755 2044 Taiwan: (65) 6755 1843 Data subject to change. Copyright (c) 2004 Agilent Technologies, Inc. Obsoletes 5989-0756EN December 4, 2004 5989-1969EN

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